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DISCRETE SEMICONDUCTORS
DATA SHEET
BU505F; BU505DF Silicon diffused power transistors
Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode. APPLICATIONS * Horizontal deflection circuits of colour television receivers. PINNING
1 2 3
MBC668
BU505F; BU505DF
2 2 1
MBB008
1
3
MBB077
3
a. BU505F. DESCRIPTION
b. BU505DF.
PIN 1 2 3 mb base
Front view
collector emitter mounting base; electrically isolated from all pins Fig.1 Simplified outline (SOT186) and symbols.
QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU505DF) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Figs 4 and 5 see Figs 4 and 5 Th 25 C; see Fig.2 inductive load; see Fig.10 VBE = 0 open base IC = 2 A; IB = 900 mA; see Fig.8 IF = 2 A CONDITIONS - - - - - - - - 0.7 TYP. MAX. 1500 700 1 1.8 2 2.5 4 20 - UNIT V V V V A A A W s
THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 5 N force on centre of package. 2. Mounted with heatsink compound and 30 5 N force on centre of package. 1997 Aug 13 2 PARAMETER CONDITIONS note 2 thermal resistance from junction to ambient VALUE 6.35 3.85 55 UNIT K/W K/W K/W
thermal resistance from junction to external heatsink note 1
Philips Semiconductors
Product specification
Silicon diffused power transistors
ISOLATION CHARACTERISTICS SYMBOL VisolM Cisol PARAMETER isolation voltage from all terminals to external heatsink (peak value) isolation capacitance from collector to external heatsink -
BU505F; BU505DF
TYP. 12 -
MAX. 1500 V
UNIT pF
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO ICsat IC ICM IB IBM Ptot Tstg Tj PARAMETER collector-emitter peak voltage collector-emitter voltage collector saturation current collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature Th 25 C; see Fig.2 see Figs 4 and 5 see Figs 4 and 5 VBE = 0 open base CONDITIONS - - - - - - - - -65 - MIN. MAX. 1500 700 2 2.5 4 2 4 20 +150 150 V V A A A A A W C C UNIT
MGK674
120 handbook, halfpage Ptot max (%) 80
102 handbook, halfpage
MGB875
hFE
10 (2) 40
(1)
0
0
50
100
Th (oC)
150
1 10-2
10-1
1
IC (A)
10
Tj = 25 C. (1) VCE = 5 V. (2) VCE = 1 V.
Fig.2 Power derating curve.
Fig.3 DC current gain; typical values.
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VCEOsust VCEsat VBEsat VF ICES PARAMETER CONDITIONS
BU505F; BU505DF
MIN. 700 - - - - - - 2.22 6 - - - - - - - - - -
TYP.
MAX. - 1 1.3 1.8 0.15 1 1 - 30 - -
UNIT V V V V mA mA mA
collector-emitter sustaining voltage IC = 0.1 A; IB = 0; L = 25 mH; see Figs 6 and 7 collector-emitter saturation voltage IC = 2 A; IB = 900 mA; see Fig.8 base-emitter saturation voltage diode forward voltage (BU505DF) collector-emitter cut-off current IC = 2 A; IB = 900 mA; see Fig.9 IF = 2 A VCE = VCESmax; VBE = 0; note 1 VCE = VCESmax; VBE = 0; Tj = 125 C; note 1
IEBO hFE
emitter-base cut-off current DC current gain
VEB = 5 V; IC = 0 see Fig.3 VCE = 5 V; IC = 2 A VCE = 5 V; IC = 100 mA
13 7 65
fT Cc
transition frequency collector capacitance
VCE = 5 V; IC = 100 mA; f = 1 MHz VCB = 10 V; IE = ie = 0; f = 1 MHz
MHz pF
Switching times in horizontal deflection circuit (see Fig.4) ts storage time ICM = 2 A; IB(end) = 900 mA; Vdr = -4 V LB = 10 H LB = 15 H LB = 25 H tf fall time ICM = 2 A; IB(end) = 900 mA; Vdr = -4 V LB = 10 H LB = 15 H LB = 25 H Note 1. Measured with a half-sinewave voltage (curve tracer). - - - 0.9 0.9 0.85 - - - s s s - - - 6.5 7.5 9.5 - - - s s s
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
handbook, full pagewidth
102 IC (A)
MGB931
10 ICM max IC max II 1
10-1
I 10-2
10-3
10-4 1 10
102
103
VCE (V)
104
Mounted without heatsink compound and 30 5 N force on centre of package. Th = 25 C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation.
Fig.4 Forward bias SOAR.
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
handbook, full pagewidth
102 IC (A)
MGB932
10 ICM max IC max II 1
10-1
10-2
I
10-3
10-4 1 10
102
103
VCE (V)
104
Mounted with heatsink compound and 30 5 N force on centre of package. Th = 25 C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation.
Fig.5 Forward bias SOAR.
1997 Aug 13
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
handbook, halfpage
+ 50 V 100 to 200 L
I halfpage handbook,C (mA) 250 200
MGE239
horizontal oscilloscope vertical 300 1
MGE252
100
6V 30 to 60 Hz
0
VCE (V) min VCEOsust
Fig.6
Test circuit for collector-emitter sustaining voltage.
Fig.7
Oscilloscope display for collector-emitter sustaining voltage.
handbook, halfpage
800
MGB889
handbook, halfpage
1.5
MGB882
VCEsat (mV) 600 VBEsat (V)
400
1
200
0 10-1
1
IC (A)
10
0.5 10-1
1
IC (A)
10
IC/IB = 2; Tj = 25 C.
IC/IB = 2; Tj = 25 C.
Fig.8
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.9
Base-emitter saturation voltage as a function of collector current; typical values.
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
handbook, halfpage
MBH382
ICsat 90%
iC
10% time tf iB ts IB (end)
time
Fig.10 Switching time waveforms.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
PACKAGE OUTLINE Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs
BU505F; BU505DF
SOT186
E E1 P m A A1
q D1
D
L1 Q
L L2
b1
1
2
b e e1
3
wM c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.4 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.5 1.3 c 0.55 0.38 D 17.0 16.4 D1 7.9 7.5 E 10.2 9.6 E1 5.7 5.3 e 2.54 e1 5.08 L 14.3 13.5 L1(1) 4.8 4.0 L2 10 m 0.9 0.5 P 3.2 3.0 Q 1.4 1.2 q 4.4 4.0 w 0.4
Note 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. OUTLINE VERSION SOT186 REFERENCES IEC JEDEC TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BU505F; BU505DF
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
NOTES
BU505F; BU505DF
1997 Aug 13
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 13
Document order number:
9397 750 02709

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